Nonvolatile Memory With Ge/Si Heteronanocrystals as Floating Gate

A Study On The Nanocrystal Floating-gate Nonvolatile Memory

Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 mm channel lengths exhibit l...

Radiation Effects on Floating-Gate Memory Cells

We have addressed the problem of threshold voltage ( TH) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low TH tails appear in TH distributions, growing with ion linear energy transfer (LET) and fluence. In particular, high LET ions, such as iodine used in this paper, can produce a bit flip. Since...

Nonvolatile memory disturbs due to gate and junction leakage currents

We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current is proportional to junction current. We find the low gate leakage current to be caused by field ionization (FI) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge accumulati...

Nonvolatile Memory Based on Si Implanted Gate Oxides

The concept of a nanocrystal memory [1,2] has several attractive features. First, it overcomes limitations of current (Flash)-EEPROM technologies: higher endurance and lower voltages become possible enabling further scaling and memories of higher density. Second, the retention characteristics can be possibly tailored from DRAM-like to EEPROM-like memories by adjusting the cluster size and their...